U. Hinze

High Accuracy EUV-Reflectometer

SPIE Advanced Lithography: Emerging Lithographic Technologies
27. Februar-1. März
San Jose
2007
Type: Konferenzbeitrag
Abstract
Developers and users of EUV-optics need precise tools for the characterization of their products. Often a measurement accuracy of 0.1\% or better is desired to detect and study slow-acting aging effect or degradation by organic contaminants. To achieve a measurement accuracy of 0.1\% an EUV-source is required which provides an excellent long-time stability, namely power stability, spatial stability and spectral stability. Naturally, it should be free of debris. An EUV-source particularly suitable for this task is an advanced electron-based EUV-tube. This EUV source provides an output of up to 300 μW at 13.5 nm. Reflectometers benefit from the excellent long-time stability of this tool. We design and set up different reflectometers using EUV-tubes for the precise characterisation of EUV-optics, such as debris samples, filters, multilayer mirrors, grazing incidence optics, collectors and masks. Reflectivity measurements from grazing incidence to near normal incidence as well as transmission studies were realised at a precision of down to 0.1\%. The reflectometers are computer-controlled and allow varying and scanning all important parameters online. The concepts of a sample reflectometer is discussed and results are presented. The devices can be purchased from the Laser Zentrum Hannover e.V.