A. K. Rüßeler
L. Zhao
F. Kurth
J. Matthes
G.-A. Hoffmann
M. Jupé
H.-H. Johannes
W. Kowalsky
T. Schwenke
H. Menzel
A. Wienke
D. Ristau

Fabry-Pérot Type Thin-Film Electro-Optical Modulator in the λ = 900 nm to 1000 nm Spectral Region

Proc. Conference on Lasers and Electro-Optics/Europe (CLEO/Europe) and European Quantum Electronics Conference (EQEC)
Type: Zeitschriftenaufsatz (non-reviewed)
Electro-optical modulators (EOMs) are widely used components because they enable fast switching of narrow-band light sources by an electrical signal. Recently, EOMs for wavelengths below λ = 1000 nm have attracted great interest for use in integrated photonics with applications such as optogenetics or biophotonics [1,2]. A Fabry-Pérot type EOM allows for very compact implementation on the basis of thin films [3,4]. This concept enables mass production for hybrid integrated optical circuits. Additionally, it implies orders of magnitude shorter interaction length between light and active medium compared to Mach-Zehnder type EOMs, the latter being based on waveguides from the active material. We explore modulation properties of materials with promising electro-optic (EO) coefficients in the double-digit pm/V range at the short end of near infrared wavelengths, not accessible by silicon photonics [5]. In contrast to the striking advantages of these materials, they exhibit non-zero losses due to intrinsic absorption or scattering, which is why shorter interaction lengths are beneficial.