Atomic layer deposition (ALD) has been proven as an excellent method for depositing high-quality optical coatings due to its outstanding film quality and precise process control. Unfortunately, batch ALD requires time-consuming purge steps, which leads to low deposition rates and highly time-intensive processes for complex multilayer coat1ings. Recently, rotary ALD has been proposed for optical applications. In this, to the best of our knowledge, novel concept, each process step takes place in a separate part of the reactor divided by pressure and nitrogen curtains. To be coated, substrates are rotated through these zones. During each rotation, an ALD cycle is completed, and the deposition rate depends primarily on the rotation speed. In this work, the performance of a novel rotary ALD coat2ing tool for optical applications is investigated and characterized with SiO2 and Ta2O5 layers. Low absorption levels of <3.1 ppm and <6.0 ppm are demonstrated at 1064 nm for around 186.2 nm thick single layers of Ta2O5 and 1032 nm SiO2, respectively. Growth rates up to 0.18 nm/s on fused silica substrates were achieved. Furthermore, excellent non-uniformity is also demonstrated, with values reaching as low as ±0.53\% and ±1.07\% over an area of 135 × 60 mm for Ta2O5 and SiO2, respectively.